ait semiconductor inc. www.ait - ic.com a m9435 mosfet - 30v p - channel enhancement mode rev1.1 - mar 2010 released , jul 2012 u p dat ed - - 1 - description features the a m9435 is the p - channel logic enhancement mod e power field effect transistor is produced using high cell density, advanced trench technology to provide excellent r ds(on) . this device is suitable for use as a load switch or in pw m and gate charge for most of the synchronous buck converter applications. the a m 9435 is available in sop8 package ordering information package type part number sop 8 m8 a m9435 m 8r a m9435 m 8vr note r: tape & reel v: halogen free package ait provides all rohs products suffix v means halogen free package ? - 30v/ - 5.8a, r ds(on) =38m(typ.)@v gs = - 10v - 30v/ - 4.0a, r ds(on) =60m(typ.)@v gs = - 4.5v ? super high density cell design for extremely low r ds(on) ? exceptional on - resistance and maximum dc current capa bility ? available in so p 8 package application ? power management in note book ? portable equipment ? dsc ? lcd display inverter ? battery powered system ? dc/dc converter ? load switch p - channel mosfet
ait semiconductor inc. www.ait - ic.com a m9435 mosfet - 30v p - channel enhancement mode rev1.1 - mar 2010 released , jul 2012 u p dat ed - - 2 - pin description ` top view pin # symbol function 1 s source 2 s source 3 s source 4 g gate 5 d drain 6 d drain 7 d drain 8 d drain
ait semiconductor inc. www.ait - ic.com a m9435 mosfet - 30v p - channel enhancement mode rev1.1 - mar 2010 released , jul 2012 u p dat ed - - 3 - absolute maximum ratings t a = 25 unless otherwise noted v dss , drain - source voltage - 30v v gss, gate - source voltage 20 v i d , continuous drain current , v gs =10v note1 t a =25 - 5.8a t a =70 - 4.2 a i dm , pulsed drain current note2 - 12a e as , single pulse avalanche energy l=0.1mh note3 60mj p d , power dissipation t a =25 2.05w t a =70 1.5w t j , operation junction temperature - 55 ~150 t stg , storage temperature range - 55 ~150 stresses above may cause permanent damage to the device. t hese are stress ratings only and functional operation of the d evice at these or any other conditions beyond those indicated in the electrical characteristics are not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. note1: the value of r ja is measured with th e device mounted on 1in 2 fr - 4 board with 2oz. copper, i a still air environment with t a =25 . note2: the data tested by pulsed, pulse width Q 300us, duty cycle Q 2 %. note3: the eas data shows max. rating. the test condition is v dd = - 25v, v gs = - 10v, l=0.1mh. thermal information parameter symbol min typ max unit thermal resistance - junction to ambient r ja 85 c/w thermal resistance - junction to case r jc 58 c/w
ait semiconductor inc. www.ait - ic.com a m9435 mosfet - 30v p - channel enhancement mode rev1.1 - mar 2010 released , jul 2012 u p dat ed - - 4 - electrical characteristics t a = 25 unless otherwise noted parameter symbol conditions min typ max unit static parameters d r a i n - s o u r c e b r e a k d o w n v o l t a g e v (br)dss v gs =0v,i d = - 250a - 30 - - v gate threshold voltage v gs(th) v ds =v gs ,i d = - 250a - 1.0 - - 2.5 v gate leakage current i gss v ds =0v,v gs = 20 v - - 100 na zero gate voltage dr ain current i dss v ds = - 24v,v gs =0v - - - 1 a v ds = - 24v,v gs =0v t j =55c - - - 5 drain - source on - resistance note2 r ds(on) v gs = - 10v,i d = - 5.8a - 38 48 m v gs = - 4.5v, i d = - 4.0a - 60 78 forward transconductance g fs v ds = - 10v,i d = - 5. 8 a - 6 - s source - drain d iode diode forward voltage v sd i s = - 2.0a,v gs =0v - - 0. 7 - 1.2 v continuous source current note1,4 i s - 6 a dynamic parameters total gate charge q g v ds = - 20 v,v gs = - 10v i d = - 5. 8 a - 6.2 - nc gate - source charge q gs - 2.5 - gate - drain charge q gd - 3.3 - i nput capacitance c iss v ds = - 15v,v gs =0v f =1mhz - 640 - pf output capacitance c oss - 270 - reverse transfer capacitance c rss - 103 - turn - on time t d(on) v dd =15v , v gs = - 10v, i d = - 5 a, r g = 3.3 - 9.2 - ns t r - 16.5 - turn - off time t d(off) - 2 1.3 - t f - 21.5 - n ote4: the data is theoretically the same as i d and i dm , in real applications, should be limited by total power dissipation.
ait semiconductor inc. www.ait - ic.com a m9435 mosfet - 30v p - channel enhancement mode rev1.1 - mar 2010 released , jul 2012 u p dat ed - - 5 - typ ical characteristics 1. output characterist ics 2. transfer characteristics 3. drain source on resistance 4. gate threshold voltage 5. gate charge 6. drain source on resistance
ait semiconductor inc. www.ait - ic.com a m9435 mosfet - 30v p - channel enhancement mode rev1.1 - mar 2010 released , jul 2012 u p dat ed - - 6 - 7. source drai n diode forward 8. capacitance 9. power dissipation 10. drain current 11. thermal transient impedance
ait semiconductor inc. www.ait - ic.com a m9435 mosfet - 30v p - channel enhancement mode rev1.1 - mar 2010 released , jul 2012 u p dat ed - - 7 - package information dimension in sop 8 (unit: mm) symbo l min max a 1. 400 1.750 a1 0.100 0.250 a2 1.3 00 1.5 00 b 0.330 0.510 c 0.1 9 0 0.250 d 4. 8 00 5. 3 00 e 3. 7 00 4. 1 00 e1 5. 790 6.200 e 1.270(bsc) l 0. 380 1.270 0 8
ait semiconductor inc. www.ait - ic.com a m9435 mosfet - 30v p - channel enhancement mode rev1.1 - mar 2010 released , jul 2012 u p dat ed - - 8 - important notice ait semiconductor inc. (ait) reserves the right to make change s to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relie d on is current. ait semiconductor inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. use of ait products in such applications is understood to be fully at the risk of the customer. as used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. in order to minimize risks associated with the customer's applicati ons, the customer should provide adequate design and operating safeguards. ait semiconductor inc . assumes to no liability to customer product design or application support. ait warrants the performance of its products of the specifications applicable at the time of sale.
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